(57)【特許請求の範囲】【請求項１】 スパッタリングターゲット用銅材

(57)【特許請求の範囲】
【請求項１】
スパッタリングターゲット用銅材料を製造する方法であって、純度が９９．９９％以上
である高純度銅の鋳塊を７００～１０５０℃で熱間押出し、押し出された材料を熱間押出
直後に５０℃／秒以上の冷却速度で冷却する工程を含み、
前記の高純度銅からなり、スパッタリングを行う面における｛１１１｝面、｛２００｝
面、｛２２０｝面、および｛３１１｝面の各々のＸ線回折のピーク強度、Ｉ｛１１１｝、
Ｉ｛２００｝、Ｉ｛２２０｝、およびＩ｛３１１｝が下記式（１）を満たし、結晶粒の粒
径が１００～２００μｍであるスパッタリングターゲット用銅材料を得ることを特徴とす
る、スパッタリングターゲット用銅材料の製造方法。
【数１】

ผลลัพธ์ (อังกฤษ) 1:

(57) [Claims][Paragraph 1] Method of making sputtering targets for copper materials, purity is 99. More than 99%In high purity copper ingots in the 700-1050 ° c hot-extrusion, extruded materials hot-extrusionContains the process immediately after the cooling in the cooling rate of more than 50 ° c / sec Surface wherein the high purity copper from the sputtering plane {111}, {200}Terms, {220}, and {311} each surface x-ray diffraction peak intensity, I {111},I {200}, {220}, I and I {311} meets the following equation (1), grain-grainTo get the copper sputtering target materials size 100-200 microns in feature.The copper sputtering target materials fabrication.[1]

ผลลัพธ์ (อังกฤษ) 2:

(57) Claim:
We claim: 1.]
A method of producing a copper material for sputtering target, purity of 99.99% or more
between the heat ingot of high purity copper which is at 700 ~ 1050 ℃ extruding, the extruded material hot extrusion
includes the step of cooling immediately after the 50 ℃ / sec or more cooling rate,
it becomes from the high-purity copper, {111} plane in the surface of performing sputtering, {200}
plane, {220} plane, and {311} plane of each of the peak intensity of X-ray diffraction
, I { 111 } , I { 200 }, I { 220 }, and I {311} satisfies the following formula (1), the crystalline grain particle
size to and obtaining a copper material for the sputtering target is 100 ~ 200μm
that method of manufacturing a copper material for the sputtering target.
[1]

ผลลัพธ์ (อังกฤษ) 3:

57 is essentially the claims of claim 1 】
】
【 range for copper sputtering target material manufacturing method, and the purity is more than 99.99 in high-purity copper ingot at 1050 ℃ to 700 hot extrusion, the extruded material after hot extrusion at 50° C. / sec or more cooling rate and cooling process of high purity copper contains said they carried out the sputtering surface 111 in the ｝
200, 220, and 311 surface of each of the X diffraction peak intensityI ｝、
I 111. I 200, 220, and I 311. To satisfy the following equation (1), and is characterized in that at to obtain copper sputtering target material is 100 to 200 μm at the grain diameter of crystal grains, a sputtering target, method for producing copper material. Method 1.