バンドギャップが小さい極めて薄い層をバンドギャップが大きい層で挟み込ん

バンドギャップが小さい極めて薄い層をバンドギャップが大きい層で挟み込んだ構造のこと。バンドギャップが小さい層のポテンシャルは周囲（バンドギャップが大きい層）よりも低く，ポテンシャルの井戸（量子井戸）ができている。LEDや半導体レーザなどにおいて，量子井戸構造を光を放射する活性層に用いている。量子井戸を複数重ねた構造は多重量子井戸（MQW：multi quantum well）と呼ぶ。

ผลลัพธ์ (อังกฤษ) 1:

That small band gap is extremely thin layers sandwiched between larger band gap layers structure. The potential of small band gap layers lower than surrounding (larger band gap layers), potential well (quantum well) is ready. Using active layer to emit light LEDs and semiconductor lasers, quantum-well structure. Multiple quantum wells （ MQW：multi quantum well ） call hovers over multiple quantum well structures.

ผลลัพธ์ (อังกฤษ) 2:

That the structure is sandwiched between layers having a larger band gap and a very thin layer has a small band gap. Potential of the layers having a smaller band gap is lower than the (layer band gap is large) around, has been able to (quantum well) the potential well. In such a semiconductor laser or LED, is used for the active layer for emitting light quantum well structure. Referred to as: (multi quantum well MQW) multiple quantum well structure is overlaid multiple quantum well.

ผลลัพธ์ (อังกฤษ) 3:

Layer sandwiched between the big structure of small band gap band gap layer is very thin. The surrounding small potential layer is larger in band gap layer (lower than the band gap ， potential well (well). In the semiconductor laser ， LED is used as the active layer and the quantum well structure for radiating light. Multiple quantum well structure in which a plurality of quantum well layers (multi quantum well MQW). Too