スパッタリングターゲット用銅材料を製造する方法であって、純度が９９．９

スパッタリングターゲット用銅材料を製造する方法であって、純度が９９．９９％以上
である高純度銅を７００～１０００℃の加熱温度で熱間圧延または熱間押出する工程と、
該熱間圧延または熱間押出の直後に冷却速度５０℃／秒以上で水冷する工程を含み、
前記の高純度銅からなり、スパッタリング面、該スパッタリング面から板厚深さ方向に
１／４板厚の位置でのスパッタリング面と平行な面、および該スパッタリング面から板厚
深さ方向に１／２板厚の位置でのスパッタリング面と平行な面で測定した結晶粒径の算術
平均がそれぞれ１００～２００μｍであり、各測定面内および各測定面の間において、結
晶粒径の標準偏差が１０μｍ以内であり、かつ、スパッタリング面、該スパッタリング面
から板厚深さ方向に１／４板厚の位置でのスパッタリング面と平行な面、および該スパッ
タリング面から板厚深さ方向に１／２板厚の位置でのスパッタリング面と平行な面で測定
した硬さの算術平均がそれぞれ５１～１００Ｈｖであり、各測定面内および各測定面の間
において、前記硬さの標準偏差が５Ｈｖ以内であるスパッタリングターゲット用銅材料を
得ることを特徴とする、スパッタリングターゲット用銅材料の製造方法。
【請求項２】
該水冷の後に、冷間圧延率の総和が３０％以下になるように冷間圧延する工程を含むこ
とを特徴とする、請求項１に記載のスパッタリングターゲット用銅材料の製造方法

ผลลัพธ์ (อังกฤษ) 1:

Method of making sputtering targets for copper materials, purity is 99. More than 99%In high purity copper heating temperatures of 700 to 1000 ° c in hot rolled or heat during the extrusion process andThe hot-rolled or hot-including process water cooling in the cooling rate more than 50 ° c / sec immediately after extrusion, Wherein high-purity copper, thickness deep from the sputtering, the sputtering and directionPlate thickness from 1 / 4 thick at sputtering a parallel, and the sputtering facesGrain size with depth measured in a parallel sputtering in position 1 / 2 thickness of arithmeticEach average 100-200 µ m, and between each measuring in-plane and each isomaster in result.Is the standard deviation of the Crystal grain size 10 µm within, and with a sputtering, the sputteringFrom the plate thickness with depth sputtering plane in position 1 / 4 thickness of a parallel plane, and said spatsuMeasured in terms a parallel sputtering in position 1 / 2 thickness of plate thickness with depth from the PetalingAnd in the 51-100 Hv respectively the hardness of the arithmetic mean between each measuring in-plane and each isomasterIn the above, copper sputtering target materials hardness standard deviation is within 5 HvCopper sputtering target materials feature to get the manufacturing method.[Paragraph 2] Wherein water cooled after the cold rolling reduction of the sum comes to less than 30% cold-rolling processes, including engageAnd features to the claim 1 listed copper sputtering target materials fabrication

ผลลัพธ์ (อังกฤษ) 2:

A process for producing a copper material for sputtering targets, purity of 99.99% or more
and a step of extruding between the high-purity copper 700 ~ 1000 ℃ hot rolling or heat at a heating temperature that is,
the heat-rolled or comprises the step of water-cooled immediately after the hot extrusion at a cooling rate of 50 ℃ / sec or more,
made ​​from the high purity copper, sputtering surface, from the sputtering surface in the thickness depth direction
at 1/4 the thickness of the position sputtering surface and a plane parallel to, and thickness from the sputtering face
arithmetic grain size measured by the sputtering surface and a plane parallel to the 1/2 sheet thickness position in the depth direction
is the average is 100 ~ 200μm, respectively, In between each measurement plane and each measuring surface, binding
is the standard deviation of the crystal grain diameter is within 10μm, and, sputtering surface, the sputtering surface
and sputtering at 1/4 the thickness of the position in the thickness depth direction from plane parallel to the plane, and the sputtering
sputtering surface and measured in a plane parallel to the surface tering at half thickness position in the thickness depth direction
is the arithmetic mean of hardness that are each 51 ~ 100Hv, each During the measurement plane and the measurement plane
in the standard deviation of the hardness of copper materials for sputtering target is within 5Hv
and wherein the obtaining, the method for producing a copper material for the sputtering target.
Wherein
after the water cooling, the total cold rolling reduction is that the includes a step of cold rolling to be 30% or less
characterized and, copper materials for sputtering target according to claim 1 production method

ผลลัพธ์ (อังกฤษ) 3:

To provide a method of manufacturing a copper sputtering target material for use in the process of hot extrusion or hot rolling heating temperature of 700 to 1000. Degree. C. to be in high purity copper 99.99% purity, and a sputtering surface of hot extrusion or immediately after hot rolling, and at the same high purity copper includes a step of cooling the cooling speed of 50. Degree. C. / sec or more, they said, from the sputtering surface in the direction of the depth and the thickness of the plate thickness of the sputtering surface 4 is located at a plane parallel to the thickness from the surface and the sputtering atArithmetic mean grain size of the measured surface in the depth direction is parallel to the thickness of the sputtering surface position at 100 to 200. Mu. M, respectively, between the surface and the inner surface of the standard deviation of crystal particle size within 10. Mu. M, and the sputtering surface to the depth direction of the plate thickness at the same sputtering from a plane parallel to the surface of the plate thickness of the sputtering surface position and spud.In the depth direction of the plate thickness タリング from a plane which is parallel to the thickness of 2 1 position of the sputtering surface 51 to 100, respectively Hv hardness as measured at the surface, the arithmetic mean of the measured surface and the inner surface, characterized in that the hardness the standard deviation is less than 5 Hv to get at the copper sputtering target material and method for producing copper sputtering target material. In this 】
2 after water cooling method, theAnd this is characterized by comprising the steps of cold rolling on cold rolling of the total rate of 30% or less, and a copper sputtering target material for manufacturing method according to claim 1